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AO5401E P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO5401E/L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications.AO5401E and AO5401EL are electrically identical. -RoHS compliant -AO5401EL is Halogen Free
SC89-3L Top View
D
Features
VDS (V) = -20V ID = -0.5 A (VGS = -4.5V) RDS(ON) < 0.8 (VGS = -4.5V) RDS(ON) < 1 (VGS = -2.5V) RDS(ON) < 1.3 (VGS = -1.8V) ESD PROTECTED!
D
G S G S
Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol 10 Sec Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current AF Pulsed Drain Current B TA=25C Power Dissipation
A
Steady State
-20 8 -0.5 -0.40 -1 0.28 0.18 -55 to 150
Units V V A
VGS TA=25C TA=70C ID IDM TA=70C PD TJ, TSTG 0.38 0.24 -0.5 -0.45
W C
Junction and Storage Temperature Range Thermal Characteristics Parameter
Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead
C A A
Symbol
t 10s Steady-State Steady-State
RJA RJL
Typ 275 360 300
Max 330 450 350
Units C/W C/W C/W
Alpha & Omega Semiconductor, Ltd.
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AO5401E
Electrical Characteristics (TJ=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Conditions ID=-250A, VGS=0V VDS=-20V, VGS=0V TJ=55C VDS=10V, VGS=4.5V VDS=10V, VGS=8V VDS=VGS ID=-250A VGS=-4.5V, VDS=-5V VGS=-4.5V, ID=-0.5A RDS(ON) Static Drain-Source On-Resistance TJ=125C VGS=-2.5V, ID=-0.5A VGS=-1.8V, ID=-0.3A gFS VSD IS Forward Transconductance Diode Forward Voltage VDS=-5V, ID=-0.5A IS=-0.1A,VGS=0V -0.4 -1 0.53 0.75 0.72 0.95 0.9 -0.66 -1 -0.5 72 VGS=0V, VDS=-10V, f=1MHz 17 9 60.5 VGS=-4.5V, VDS=-10V, RL=50, RGEN=3 IF=-0.5A, dI/dt=100A/s
2
Min -20
Typ
Max
Units V
1 5 1 10 -0.5 -0.9 0.8 0.95 1 1.3
A A V A S V A pF pF pF ns ns ns ns
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS Input Capacitance Ciss Coss Crss Output Capacitance Reverse Transfer Capacitance
100
SWITCHING PARAMETERS tD(on) Turn-On DelayTime tr tD(off) tf trr Qrr Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-0.5A, dI/dt=100A/s
150 612 436 27 8.3 35
ns nC
A: The value of R JA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T A =25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using <300 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in SOA curve provides a single pulse rating. Rev 4 : Oct 2008
2
FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO5401E
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5 -6V 4 -3.5V -ID(A) -4.5V -4V 2 -10V 3 VDS=-5V 25C
-ID (A)
3
2
-3V -2.5V
125C 1
1 VGS=-2.0V 0 0 1 2 3 4 5 -VDS (Volts) Figure 1: On-Region Characteristics 1.4 1.2 RDS(ON) ( ) 1 VGS=-2.5V 0.8 0.6 0.4 0 0.2 0.4 0.6 0.8 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage VGS=-4.5V Normalized On-Resistance 1.6 0 0 1 2 3 4 5 -VGS(Volts) Figure 2: Transfer Characteristics
VGS=-1.8V
1.4
VGS=-1.8V VGS=-4.5V
1.2 VGS=-2.5V 1
0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature
1.2 1.1 1 0.9 RDS(ON) ( ) 0.8 0.7 0.6 0.5 0.4 0.3 0 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25C 125C ID=-0.5A
1.0E+00 1.0E-01 125C 1.0E-02 -IS (A) 25C 1.0E-03 1.0E-04 1.0E-05 1.0E-06 0.0 0.4 0.8 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO5401E
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5 VDS=-10V ID=-0.5A Capacitance (pF) 100 Ciss 80
4 -VGS (Volts)
3
60
2
40 Coss 20 Crss
1
0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 -Qg (nC) Figure 7: Gate-Charge Characteristics 10.00
0 0 5 10 15 20 -VDS (Volts) Figure 8: Capacitance Characteristics
TJ(Max)=150C, TA=25C
14 12 TJ(Max)=150C TA=25C
-ID (Amps)
1.00
10
100s 1ms
0.10
Power (W)
8 6 4 2 0 0.0001
RDS(ON) 1s limited 10s DC
10ms 0.1s
0.01 0.1 1 10 100
0.001
0.01
0.1
1
10
100
-VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E)
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10 Z JA Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=450C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD Ton Single Pulse
T
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO5401E
Gate Charge Test Circuit & Waveform
Vgs Qg -10V
VDC
VDC
DUT Vgs Ig
RL Vds Vgs Vgs Rg DUT
VDC
Vgs Vds
Diode Recovery Test Circuit & Waveforms
Vds + DUT Vgs
t rr
Vds -
Isd Vgs
L
VDC
+ Vdd -Vds
Ig
Alpha & Omega Semiconductor, Ltd.
+
-
+
Charge
-
+
-
Vds
Qgs
Qgd
Resistive Switching Test Circuit & Waveforms
ton td(on) tr t d(off) toff tf
Vdd
90%
10%
Q rr = - Idt
-Isd
-I F
dI/dt -I RM Vdd
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